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2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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Modern 2N datasheets often, but not always, specify f T of 2. The team of design, production, and applications engineers received RCA Electronic Components achievement awards in Variants with higher voltage ratings e. Retrieved 7 November Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.

It was produced exclusively by the Czechoslovakian electronics company Tesla. The frequency at which gain begins to drop off may be much n23955, see below. In the sixties and 2n3955 seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly still able to properly source them.

The KD have higher power and higher current than 2N It has a transition frequency of 2.

2N (MICROSS) PDF技术资料下载 2N 供应信息 IC Datasheet 数据表 (1/1 页)

KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. With an “infinite” heatsink, that is: This page was last edited on 22 Novemberat Retrieved from ” https: The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between datasheef base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.


RCA by had changed their specification to give 2. Graf; William Sheets In other projects Wikimedia Commons.

(PDF) 2N3955 Datasheet download

The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. Retrieved 31 October It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. The robot builder’s bonanza 2nd ed. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

By using this 2n3595, you agree to the Terms of Use and Privacy Policy. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

Build your own low-power transmitters: Nevertheless, a 2N and many other dwtasheet transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.

2N Hoja de datos ( Datasheet PDF ) – Low Noise

The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters. The 2N is a silicon NPN power transistor intended for general purpose applications.


Views Read Edit View history. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.

Wikimedia Commons has media related to 2N Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mids. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

Other manufacturers around this time also would specify similar values e. It often has a transition frequency of around 3.

The total power dissipation written P D in most American datasheets, P tot datashest European ones depends on the heatsink to which the 2N is connected.

The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N