20N60A4 v, SMPS Series N-channel Igbts. The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs. Datasheet Transistor 20n60a4 – Download as PDF File .pdf) or read online. datasheet pdf data sheet FREE from Datasheet (data sheet) P20N60A4 20N60A4 0N60A4 N60A4 60A4 0A4 A4 4 HGTP20N60A4.
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Tips of soldering irons should be grounded.
20N60A4 equivalent datasheet & applicatoin notes – Datasheet Archive
When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means – for example, with a metallic wristband. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM.
Devices should never be inserted into or removed from circuits with power on. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup.
Device turn-off delay can establish an additional frequency.
When handling these devices. When devices are removed by hand from their carriers.
Circuits that leave the gate open-circuited or floating should be avoided. Other definitions are possible. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature.
The sum of device switching 20n660a4 conduction losses must not exceed P D. All tail losses are included in the calculation for E OFF ; i.
Insulated Gate Bipolar Transistors are susceptible to. Gate Termination – The gates of these devices are essentially capacitors.
Other typical frequency vs collector current I CE plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and Operating Frequency Information Operating frequency information datsheet a typical device Figure 3 is presented as a guide for estimating device performance for a specific application. Prior to assembly into a circuit, all leads should be kept.
20N60A4 PDF Datasheet浏览和下载
Operating frequency information for a dafasheet device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. Devices should never be inserted into or removed from.
The operating frequency plot Figure 3 of a typical. Exceeding the rated V GE can datzsheet in permanent damage to the oxide layer in the gate region. Figure 3 is presented as a guide for estimating device.
IGBTs can be handled safely if the following basic precautions are taken: Home – IC Supply – Link. Circuits that leave the gate.
Datxsheet tail losses are included in the. With proper handling and application. The sum of device switching and conduction losses must not. If gate protection is required an external Zener is recommended. The information is based on measurements of a. Gate Protection – These devices do not have an internal monolithic Zener diode from gate to emitter.